Itraconazole

was formulated in bioadhesive film formulati

Itraconazole

was formulated in bioadhesive film formulations that could be retained in the vagina for prolonged intervals. The polymeric films were prepared by solvent evaporation and optimized for BIRB 796 various physicodynamic and aesthetic properties. In addition, percentage drug retained on vaginal mucosa was evaluated using a simulated dynamic vaginal system as function of time. A polymeric film containing 100 mg itraconazole per unit (2.5 cm x 2.5 cm) have been developed using generally regarded as safe listed excipients. The pH of vaginal film was found to be slightly acidic (4.90 +/- 0.04) in simulated vaginal fluid and alkaline (7.04 +/- 0.07) in water. The little moisture content (7.66 +/- 0.51% w/w) was present in the film, which helps them to remain stable and kept them from being completely dry and brittle. The mechanical properties, tensile strength, and percentage elongation at break (9.64

N/mm(2) and 67.56% for ITRF(65)) reveal that the formulations were found to be soft and tough. The films (ITRF(65)) contained solid dispersion of itraconazole (2.5)/hydroxypropyl cellulose (1)/polyethylene glycol 400 (0.5), which was found to be the optimal composition for a novel bioadhesive vaginal formulation, as they showed good peelability, relatively good swelling index, and moderate tensile strength Givinostat and retained vaginal mucosa up to 8 h. Also, the film did not markedly affect normal vaginal flora (lactobacillus) and was noncytotoxic as indicated by the negligible decrease in cell viability.”
“The

electroluminescence (EL) characteristics of a set of InAs/GaInNAs quantum dot (QD) light-emitting diodes with varying In and N contents are analyzed. Room-temperature EL around 1.5 mu m is obtained with 15% In and 2% N in the QD capping layer. It is shown that the addition of N results in a degradation of the external efficiency, n(ext), probably due to an increase CHIR99021 in the nonradiative recombination in the QD heterostructure and an increase in the carrier escape from the QD to the capping layer, which yield a degradation of the current injection efficiency into the QD. Nevertheless, n(ext) can be partially recovered if a postgrowth rapid thermal annealing is performed, although this also results in a blueshift in the EL peak wavelength. The different contributions to the EL spectra are also analyzed and identified by looking at their dependence on injected current and temperature. It is found that N-containing devices show two radiative transitions. The lowest energy transition has been ascribed to the QD ground state recombination, whereas the higher energy transition has been attributed to recombination of carriers confined in the capping layer. Moreover, the carrier loss mechanisms responsible for the quenching of the EL in the dilute nitride-based devices are studied. It is found that the EL thermal quenching has an activation energy which can be ascribed to carrier escape from the QD to the capping layer.

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